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| silicon phototransistor sdp8405 17 september 1997 description features t-1 plastic package 20? (nominal) acceptance angle consistent optical properties wide sensitivity ranges mechanically and spectrally matched to sep8505 and sep8705 infrared emitting diodes the sdp8405 is an npn silicon phototransistor transfer molded in a t-1 clear plastic package. transfer molding of this device assures superior optical centerline performance compared to other molding processes. lead lengths are staggered to provide a simple method of polarity identification. (.51) .020 sq. lead typ. .050 (1.27) dia. (3.94) .155 emitter collector dia. .125 (3.18) .115 (2.92) min. (12.7) .500 .03 (.76) .180 (4.57) .200 (5.08) max. (6.35) .250 .05(1.27) lead typ. dim_100.ds4 infra-22.tif outline dimensions in inches (mm) 3 plc decimals 0.005(0.12) tolerance 2 plc decimals 0.020(0.51) honeywell reserves the right to make changes in order to improve design and supply the best products possible. h ? honeywell inc.
silicon phototransistor sdp8405 17 september 1997 electrical characteristics units test conditions min parameter symbol typ max schematic absolute maximum ratings (25?c free-air temperature unless otherwise noted) collector-emitter voltage 30 v emitter-collector voltage 5 v power dissipation 70 mw [] operating temperature range -40?c to 85?c storage temperature range -40?c to 85?c soldering temperature (5 sec) 240?c notes 1. derate linearly from 25?c free-air temperature at the rate of 0.18 mw/?c. honeywell reserves the right to make changes in order to improve design and supply the best products possible. h ? honeywell inc. silicon phototransistor sdp8405 17 september 1997 switching time test circuit cir_015.cdr switching waveform cir_004.cdr responsivity vs angular displacement gra_047.ds4 angular displacement - degrees r e l a t i v e r e s p o n s e 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -40 -30 -20 -10 0 +10 +20 +30 +40 fig. 1 collector current vs ambient temperature gra_039.ds4 ambient temperature - c n o r m a l i z e d c o l l e c t o r c u r r e n t 0.0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50 60 70 80 fig. 2 dark current vs temperature gra_301.cdr fig. 3 non-saturated switching time vs load resistance gra_041.ds4 load resistance - ohms r e s p o n s e t i m e - s 1 10 100 10 100 1000 10000 fig. 4 honeywell reserves the right to make changes in order to improve design and supply the best products possible. h ? honeywell inc. silicon phototransistor sdp8405 17 september 1997 spectral responsivity gra_036.ds4 wavelength - nm r e l a t i v e r e s p o n s e 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 400 600 800 1000 1200 fig. 5 coupling characteristics with sep8505 gra_029.ds4 lens-to-lens separation - inches l i g h t c u r r e n t - m a 0.1 0.2 0.4 1 2 4 10 0.01 0.2 0.4 0.7 1 0.02 0.04 0.1 0.7 7 v ce = 5 v i f = 25 ma t a = 25 c fig. 6 all performance curves show typical values honeywell reserves the right to make changes in order to improve design and supply the best products possible. h ? honeywell inc. |
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